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This letter presents a $17~\mu \text{m}$ pixel pitch $640\times 512$ uncooled infrared focal plane arrays based on the double sacrificial layer microbolometer technology incorporating amorphous vanadium oxide thin film and frequency selective structure. The amorphous vanadium oxide thin-film features low-noise and high-thermal coefficient of resistance characteristics, which help to improve the...
A uni-traveling-carrier photodetector (UTC-PD) with dipole-doped structure at the InGaAs/InP interface has been designed, fabricated and characterized. The device transit time delay and RC time delay was extracted using an equivalent circuit model. A transit time delay time less than 4.5 ps was obtained with a junction reverse bias lager than 4 V. The results suggest that the current-blocking at InGaAs/InP...
This paper describes the fabrication and high speed characterization for uni-traveling-carrier photodetectors (UTC-PD) with dipole-doping layers. The dipole-doping InGaAs/InP layer has been introduced at the InGaAs (absorption layer) and InP (collection layer) interface to prevent current blocking in our UTC-PD devices. These UTC-PDs have achieved high photocurrent of 52 mA, high responsivity of 0...
For two-pattern at-speed scan testing, the excessive power supply noise at the launch cycle may cause the circuit under test to malfunction, leading to yield loss. This paper proposes a new weight assignment scheme for logic switching activity; it enhances the IR-drop assessment capability of the existing weighted switching activity (WSA) model. By including the power grid network structure information,...
An improved analytical calculation for the MOSFET surface potential is introduced by virtue of a high-order approximation. This high-order analytical approximation improves the accuracy of the surface potential from 1 nV to 3 fV for typical design conditions yet with little additional computational effort. In particular, this new scheme extends the applicable range of the analytical approximation...
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